逆变器
原位
电气工程
相(物质)
计算机科学
电子工程
工程类
物理
电压
量子力学
气象学
作者
Chondon Roy,Namwon Kim,Daniel Evans,James Gafford,Babak Parkhideh
标识
DOI:10.1109/tpel.2024.3410174
摘要
This article addresses the critical issue of real-time monitoring of on -state resistance ( R DSON ) of all power semiconductor devices within a three-phase inverter. An optimized on -state voltage ( V DSON ) measurement circuit and configuration for a multiphase converter architecture is proposed, designed to overcome the challenges posed by different characteristics and nonidealities of current and voltage sensor components. In addition to the hardware, the solution includes a data processing and qualification strategy that minimizes the impact of switching noise and processing circuitry nonidealities on R DSON calculation. The efficacy of the approach is demonstrated through experimental results from a three-phase inverter, which is designed with silicon carbide metal-oxide-semiconductor field-effect transistors. This work contributes a novel solution to the field, enhancing the reliability and efficiency of power semiconductor device monitoring.
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