Highly Efficient Deposition of Centimeter‐Scale MoS2 Monolayer Film on Dragontrail Glass with Large Single‐Crystalline Domains

Abstract Highly efficient growth of a centimeter‐scale MoS2 monolayer film by oxide scale sublimation chemical vapor deposition (OSSCVD) in a time as short as 60 s is reported. Benefiting from the superior catalytic ability of Dragontrail glass (DT‐glass) substrate and the controlled large vapor supersaturation of the molybdenum source, the ultrafast deposition of MoS2 is realized with maintaining large‐sized single‐crystalline domains over 20 µm at maximum in the film. It is comparable to those reported for MoS2 grown in tens of minutes and even hours. Similar to the face‐to‐face precursor feed route, the gas‐controlled OSSCVD with a showerhead configuration facilitates a homogeneous and controllable source supply. It enables high‐quality monolayer MoS2 film deposition on 2 × 2 cm2 DT‐glass with centimeter‐scale uniformity confirmed by microscopic, spectroscopic, and electrical characterizations. Back‐gate MoS2 field‐effect transistors fabricated on polycrystalline continuous film exhibit the maximum field‐effect mobility of 5.1 cm2 V−1s−1 and a peak Ion/Ioff ratio of 5 × 108. They reach 40 cm2 V−1 s−1 and 1.2 × 109, respectively, on single‐crystalline domains. These results are even greater than those for MoS2 grown using 1–2 orders of magnitude longer deposition time and higher temperatures. This study highlights the opportunities for low‐cost high‐throughput production of large‐area high‐quality monolayer MoS2.