Enhancing the Efficiency and Stability of Inverted Perovskite Solar Cells and Modules through Top Interface Modification with N‐type Semiconductors

The interface modification between perovskite and electron transport layer (ETL) plays a crucial role in achieving high performance inverted perovskite photovoltaics (i-PPVs). Herein, non-fullerene acceptors (NFAs), known as Y6-BO and Y7-BO, were utilized to modify the perovskite/ETL interface in i-PPVs. Non-polar solvent-soluble NFAs can effectively passivate surface defects without structural damage of the underlying perovskite films. Additionally, the improved phenyl-C61-butyric acid methyl ester (PCBM) ETL induced by NFAs modification significantly accelerates the electrons extraction. As a result, both Y6-BO and Y7-BO exhibit more effective interface modification effects compared to traditional PI molecules. The power conversion efficiency (PCE) of the inverted perovskite solar cell (i-PSC) modified with Y7-BO reaches 25.82 %. Moreover, the adoption of non-polar solvents and the superior semiconductor properties of Y7-BO molecules also enable perovskite solar modules (i-PSM) with effective areas of 50 cm