High pulse power 1550 tunnel junction laser diode

With the technology development, it is highly desirable to enhance the power and brightness of a 1550 pulsed laser in order to increase the detectable distance and improve the spatial resolution. In this paper, a 1550 tunnel junction high peak power semiconductor laser based on AlGaInAs/InP material system for lidar detection is designed, which peak output power is approximately three times that of a individual emitter.The adjacent individual emitter of the tunnel junction laser is connected by the tunnel junction, and each tunnel junction is formed by a highly doped p-type InGaAs layer and a highly doped n-type InGaAs layer. Crosslight Software's PICS3D module is used to simulate the epitaxial structure of an individual emitter, simulating its photoelectric characteristics and through the simulation and optimization of a individual emitter with a strip width of 100 μm and different cavity length, it is found that when the cavity length is 1000 μm, the slope efficiency of the single-junction laser can reach 0.37 W/A; when the cavity length is 800 μm, the slope efficiency of the individual emitter can reach 0.45 W/A. Therefore, shortening the cavity length of the laser can improve the slope efficiency of the laser, and it is expected to increase the slope efficiency of the three-tunnel junction laser to more than 1 W/A. It is expected to achieve a 1550 high-power tunnel junction semiconductor laser.