材料科学
摩擦电效应
纳米发生器
光电子学
整改
异质结
晶体管
石墨烯
肖特基势垒
数码产品
二极管
场效应晶体管
纳米技术
电气工程
电压
压电
复合材料
工程类
作者
Yifei Wang,Xiangde Lin,Guoyun Gao,Jinran Yu,Yichen Wei,Jianhua Gong,Jia Sun,Zhong Lin Wang,Qijun Sun
标识
DOI:10.1002/adfm.202313210
摘要
Abstract Graphene has attracted considerable interest for next‐generation electronics. However, the absence of natural bandgap has limited the current on/off ratio of graphene‐based transistors. Vertical integration of 2D heterostructures offers a promising approach to address this challenge, enabling high‐current‐density vertical field‐effect transistor (VFET) with large on/off ratio. Here, a triboelectric potential‐powered VFET with a vertical stacked graphene/MoS 2 heterostructure and a sliding‐mode triboelectric nanogenerator (TENG) coupled with gate dielectrics are proposed. The tribotronic VFET has an ultrashort channel length in vertical direction, exhibiting excellent current driving capability with an ultrahigh on‐state current density of 950 A cm −2 and a good current on/off ratio of 630. It also demonstrates reconfigurable diode behavior with a rectification ratio over 10 2 . Temperature‐dependent studies are applied to tribotronic devices for the first time, indicating an effective modulation on the Schottky barrier height of 150 meV by the triboelectric potential. A green LED pixel is driven by the tribotronic VFET as a demonstration to work as a tactile interactive light‐emitting device. The demonstrated tribotronic vertical device offers a promising strategy for integrating various 2D layered materials with TENG in vertical direction, enabling 3D integration of low‐power and interactive devices for next‐generation electronics.
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