A 7–13 GHz Low Noise Amplifier MMIC With Ultralow Noise Figure

A wideband low noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) is proposed with ultralow noise figure (NF) and high gain in the operating frequency range of 7–13 GHz. The finger width of the transistor, $V_{\text{gs}}$ , minimum NF, and maximum available gain (MAG) are analyzed in detail to give guidance for the design of LNA. The current-reuse and feedback technique is employed to enhance in-band gain and improve the gain flatness. For demonstration, an LNA sample is fabricated in 0.15- $\mu$ m GaAs process, whose measured results possess a gain of over 34.5 dB, NF of below 0.87 dB, and output 1-dB compression point (OP $_{\text{1dB}}$ ) of over 12.7 dBm from 7 to 13 GHz. Especially, the gain and NF are much better than those of the reported works.