铝
氧化物
化学
肖特基二极管
合金
电容
各向同性腐蚀
氧化铝
蚀刻(微加工)
分析化学(期刊)
图层(电子)
化学工程
材料科学
光电子学
电极
物理化学
工程类
有机化学
二极管
色谱法
作者
R. Kroll,Z. Henderson,Ben F. Spencer,Pınar Kaya,V. Knoblauch,Dirk Engelberg
标识
DOI:10.1016/j.jelechem.2023.117481
摘要
The Mott-Schottky approach was applied to access the semiconduction behaviour of native aluminium oxide films of pure aluminium (99.5 wt%) and Al-7075-T6 (Al-Zn-Mg-Cu) alloy investigating the effect of acquisition parameters and surface treatment. Pristine samples were subjected to Mott-Schottky cycling, showing higher defective donor states for Al-7075-T6. The application of step rates of 50–100 mV resulted in flat M−S plots, implicating the influence of the potential independent Helmholtz layer on the space charge capacitance. Chemical etching reduced the oxide thickness for both specimens, whereas higher defect donor densities were determined for pure Al.
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