残余应力
曲率
材料科学
薄脆饼
应力松弛
压力(语言学)
放松(心理学)
沉积(地质)
曲率半径
复合材料
基质(水族馆)
薄膜
图层(电子)
弹性模量
几何学
平均曲率
数学
流量平均曲率
光电子学
纳米技术
地质学
蠕动
心理学
社会心理学
古生物学
语言学
哲学
海洋学
沉积物
作者
Zhaoxia Rao,Hanxun Jin,A. M. Engwall,Eric Chason,Kyung–Suk Kim
摘要
Abstract We report closed-form formulas to calculate the incremental-deposition stress, the elastic relaxation stress, and the residual stress in a finite-thickness film from a wafer-curvature measurement. The calculation shows how the incremental deposition of a new stressed layer to the film affects the amount of the film/wafer curvature and the stress state of the previously deposited layers. The formulas allow the incremental-deposition stress and the elastic relaxation to be correctly calculated from the slope of the measured curvature versus thickness for arbitrary thicknesses and biaxial moduli of the film and the substrate. Subtraction of the cumulative elastic relaxation from the incremental-deposition stress history results in the residual stress left in the film after the whole deposition process. The validities of the formulas are confirmed by curvature measurements of electrodeposited Ni films on substrates with different thicknesses.
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