Growth and annealing effect of SrTiO3 thin films grown by pulsed laser deposition using fourth harmonic Nd:YAG pulsed laser

SrTiO 3 homoepitaxial films were grown by pulsed laser deposition (PLD) using a fourth harmonic Nd:YAG pulsed laser. The substrate temperature was kept constant at 600, 700, or 800 °C. The laser energy was set at 9–25 mJ on the polycrystal SrTiO 3 target. Post‐procedure annealing was performed in the air for 24 h. The X‐ray diffraction measurement results showed that the lattice constant of the film was only 0.010 Å larger than that of the substrate and was not dependent on the annealing temperature. We demonstrated the possibility of growing near‐stoichiometric SrTiO 3 film by PLD using an Nd:YAG laser.