Edge-emitting lasers with short-period semiconductor/air distributed Bragg reflector mirrors

We demonstrate a short-cavity edge-emitting 0.98-μm GaAs-based laser with semiconductor/air distributed Bragg reflector (DBR) mirrors made by reactive ion etching (RIE). The dc and small-signal modulation properties of 100-μm-long lasers have been measured and are characterized by I/sub th/=4.5 mA and f/sub -3dB/=30 GHz under pulsed conditions, respectively. The far-field pattern of light emanating from the DBR is also measured.