光电探测器
光电子学
材料科学
紫外线
近红外光谱
宽带
电压
活动层
量子效率
电子
红外线的
图层(电子)
光学
纳米技术
物理
薄膜晶体管
量子力学
作者
Fang‐Chung Chen,Shang-Chieh Chien,Guan-Lin Cious
摘要
Highly sensitive polymer photodetectors exhibiting broad spectral responses, ranging from the ultraviolet to the near-infrared (NIR) region, are obtained after incorporating an organic NIR dye into the device active layer. As a result, high external quantum efficiencies (>7000%) and high responsivities (32.4 A/W) are achieved at an extremely low operating voltage (−1.5 V). The high photomultiplation could be attribute to trapping of electrons, originating from the photogenerated electron/hole pairs, at the dye molecules, which effectively facilitates hole injection from the external circuit. The device preparation scheme presented herein opens up the possibility fabricating lost-cost, flexible organic photodetectors.
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