SOI wafer achieved by smart-cut process

The smart-cut process is an alternative route to the former silicon on insulator (SOI) material technologies such as SIMOX (separation by implanted oxygen) and BESOI (bonded and etch back SOI). It is based on proton implantation and wafer bonding associated with a temperature treatment which induces a in-depth splitting of the implanted wafer. In this paper, basic mechanisms of bonding and the splitting are discussed. Finally the characteristics of the final structure are presented.