法布里-珀罗干涉仪
谐振器
光电子学
二极管
激光器
材料科学
半导体激光器理论
光学
砷化镓
物理
作者
Yu Li,Yuanjue Zhang,Hongwei Chen,Sigang Yang,Minghua Chen
标识
DOI:10.1109/jlt.2018.2838325
摘要
The fast-growing fields of coherent optical communications, light detection and ranging (LIDAR), etc., have huge demand for narrow linewidth lasers. While laboratory-scale lasers have high stability with narrow linewidth down to few Hz, they are usually in large size and unable to be integrated with chip-scale optical systems. In this paper, we develop a new on-chip semiconductor laser by introducing the Vernier effect and the self-injection locking effect simultaneously between a Fabry–Perot diode laser and an external microresonator on silicon chip. The proposed laser is demonstrated with a narrow linewidth of 8 kHz and wide switchable range of 17 nm. This paper explores a new scheme to realize narrow linewidth with wide tunability for on-chip semiconductor lasers.
科研通智能强力驱动
Strongly Powered by AbleSci AI