Development of the integrated passive device using through-glass-via substrate

There is a growing demand for high-speed mobile communication, but the current ceramic filters have limitations in thin module and high frequency applications. Although Si interposers are capable of forming fine pitch interconnects, their applications are currently limited to high-end FPGAs, due to high cost. Also due to the limited resistivity, through-silicon-via (TSV) has a large insertion loss in the high frequency region. On the other hand, since glass substrates have mass-production infrastructure for large panel sizes, it is easy to reduce the production cost. Furthermore, it is characterized by excellent electrical characteristics in the high frequency region. “The Integrated Passive Devices (IPD)” on glass panel have been developed by using conventional FC-BGA technologies. This glass IPD substrate is suitable for the use in a thin package for high-frequency mobile application. This glass IPD substrate is manufactured with solenoid coils using through glass vias (TGV). In this work, copper wiring is formed on a TGV glass panel (size of 320 × 400 mm and 0.3 mm thick) by semi-additive method. A glass core solenoid coil is fabricated as a passive circuit element. As a result, a three-dimensional solenoid inductor using this glass IPD substrate showed that the Q value was as higher than 70 at 1 GHz. A prototype TGV diplexer (DPX) was also fabricated, using the glass core solenoid inductors and capacitors fabricated in the same substrate.