Methods for the ICP-OES Analysis of Semiconductor Materials

The techniques employed in the compositional analysis of semiconductor materials by inductively coupled plasma optical emission spectroscopy (ICP-OES) dramatically influence the accuracy and reproducibility of the results. We describe methods for sample preparation, calibration, standard selection, and data collection. Specific protocols are suggested for the analysis of II–VI compounds and nanocrystals containing the elements Zn, Cd, S, Se, and Te. We expect the methods provided will apply more generally to semiconductor materials from other families, such as to III–V and IV–VI nanocrystals.