High reliability InGaZnO TFT by inductively coupled plasma sputtering system

The reliability of oxide semiconductor TFT and the method to lower the process temperature have become serious problems. In order to solve these problems we have developed inductively coupled plasma sputtering equipment that can control the Radio Frequency (RF) power to generate Inductively Coupled Plasma (ICP) and the voltage applied to the sputtering target independently. Using this equipment, we can deposit high-density oxide semiconductor films at room temperature and fabricate highly reliable TFTs with them.