材料科学
电致发光
膜
光电子学
制作
光致发光
基质(水族馆)
半导体
拉曼光谱
Lift(数据挖掘)
发光二极管
泄漏(经济)
拉曼散射
纳米技术
光学
化学
图层(电子)
医学
生物化学
替代医学
海洋学
物理
宏观经济学
病理
地质学
计算机科学
经济
数据挖掘
作者
Tianhao Jiang,Jian Wang,Jiaqi Liu,Meixin Feng,Shumeng Yan,Wen Chen,Qian Sun,Hui Yang
标识
DOI:10.35848/1882-0786/ac8144
摘要
Abstract Semiconductor nano-membranes provide a new way to develop optical devices with better performance. Herein, we report a fabrication method of GaN-based LED membranes with a complete device structure including contact metals from Si substrate by using electrochemical etching of highly conductive AlN/Si interface, which is often naturally formed in GaN-on-Si materials. Photoluminescence and Raman scattering spectra show that the internal stress after the lift-off was effectively lightened with 1.45 GPa. Electrical measurement results show that both the leakage current and series resistance were largely decreased, and strong and uniform electroluminescence further proved the well-preserved whole structure.
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