欧姆接触
材料科学
肖特基势垒
石墨烯
杰纳斯
异质结
肖特基二极管
接触电阻
范德瓦尔斯力
凝聚态物理
标度系数
光电子学
密度泛函理论
金属半导体结
纳米技术
制作
图层(电子)
计算化学
物理
化学
医学
分子
二极管
量子力学
替代医学
病理
作者
Hao Guo,Xiufeng Lang,Xiaobao Tian,Wentao Jiang,Guangzhao Wang
出处
期刊:Nanotechnology
[IOP Publishing]
日期:2022-07-28
卷期号:33 (42): 425704-425704
被引量:8
标识
DOI:10.1088/1361-6528/ac800d
摘要
Two-dimensional (2D) Janus materials have attracted significant attention due to their asymmetrical structures and unique electronic properties. In this work, by using the first-principles calculation based on density functional theory, we systematically investigate the electronic properties of 6 types of Janus-XGa2Y/Graphene van der Waals heterostructures (vdWHs). The results show that the Janus-XGa2Y/Graphene vdWHs are connected by weak interlayer vdW forces and can form n-type Schottky contact, p-type Schottky contact or Ohmic contact when the spin-orbit coupling (SOC) is not considered. However, when considering SOC, only the SeGa2S/G and G/SeGa2S vdWHs show n-type Schottky contact, and other vdWHs show Ohmic contacts. In addition, the Schottky barriers and contact types of SeGa2S/Graphene and Graphene/SeGa2S vdWHs can be effectively modulated by interlayer distance and biaxial strain. They can be transformed from intrinsic n-type Schottky contact to p-type Schottky contact when the interlayer distances are smaller than 2.65 Å and 2.90 Å, respectively. They can also be transformed to Ohmic contact by applying external biaxial strain. Our work can provide useful guidelines for designing Schottky nanodiodes, field effect transistors or other low-resistance nanodevices based on the 2D vdWHs.
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