发光二极管
光电子学
材料科学
二极管
量子效率
红灯
量子阱
光学
物理
生物
激光器
植物
作者
Panpan Li,Hongjian Li,Matthew S. Wong,Philip Chan,Yunxuan Yang,Haojun Zhang,Michael Iza,James S. Speck,Shuji Nakamura,Steven P. DenBaars
出处
期刊:Crystals
[MDPI AG]
日期:2022-04-12
卷期号:12 (4): 541-541
被引量:23
标识
DOI:10.3390/cryst12040541
摘要
InGaN-based red micro-size light-emitting diodes (μLEDs) have become very attractive. Compared to common AlInGaP-based red µLEDs, the external quantum efficiency (EQE) of InGaN red µLEDs has less influence from the size effect. Moreover, the InGaN red µLEDs exhibit a much more robust device performance even operating at a high temperature of up to 400 K. We review the progress of InGaN red μLEDs. Novel growth methods to relax the strain and increase the growth temperature of InGaN red quantum wells are discussed.
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