光子晶体
带隙
拓扑(电路)
光电子学
太赫兹辐射
光子学
联轴节(管道)
物理
平面的
材料科学
双工器
GSM演进的增强数据速率
透射率
超单元
Dirac(视频压缩格式)
拓扑绝缘体
之字形的
制作
光学
激光阈值
石墨烯
极化子
超材料
量子
谐振器
波导管
作者
H. Wang,Hongyu Shi,Zhihao Lan,Wei E. I. Sha,Fei Gao,Zixin Liu,Cheng Guo,Jianjia Yi,Xiaoming Chen,AnXue Zhang
标识
DOI:10.1002/lpor.202503173
摘要
ABSTRACT Topological photonic crystals (TPCs) provide a robust platform for terahertz (THz) applications demanding precise manipulation of topological band structures. This study demonstrates a planar valley TPC operating in the THz regime, facilitating tunable coupling between adjacent edge states. When two domain walls supporting different topological edge modes are positioned in close proximity, the spatial overlap of their evanescent wavefunction tails induces mode coupling, resulting in the emergence of a bandgap within the edge‐state continuum. A semi‐analytical model, inspired by frameworks in quantum mechanics and condensed matter physics, quantitatively correlates the induced bandgap width with the modal decay constants and spatial separation of the edge states. Full‐wave simulations of diverse supercell architectures, including those incorporating Dirac photonic crystals (DPCs), corroborate the theoretical predictions. Exploiting this coupling mechanism, an on‐chip THz topological duplexer is designed and experimentally realized, demonstrating low insertion loss, high isolation, and strong immunity to fabrication imperfections, withstanding geometric deviations of up to approximately 20% without performance degradation. These findings establish a unified framework for bandgap engineering via edge‐state interactions and open a new avenue toward high‐performance, frequency‐selective, and integration‐compatible topological photonic devices in the THz regime.
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