荧光粉
材料科学
结构材料
复合数
亮度
激光器
复合材料
高温
光电子学
光学
物理
作者
Xin Liu,Mingxiang Chen,Jiuzhou Zhao,Hongjin Zhang,Peng Yang,Qing Wang
标识
DOI:10.26599/jac.2024.9221027
摘要
Next-generation high-brightness laser lighting confronts a key challenge in developing static luminescent materials with remarkable optical-thermal performances and low cost. Herein, a unique composite architecture of Y3Al5O12:Ce3+ (YAG) phosphor-in-glass film coated on different heat-conducting substrates (PiGF@HCSs), i.e., PiGF@sapphire, PiGF@Al2O3, PiGF@AlN, and PiGF@BN-AlN composites, was designed and prepared by a simple film printing and low-temperature sintering technology. The heat-conducting substrates significantly affect the luminescence saturation and phosphor conversion of PiGF@HCSs, making the substrates with higher thermal conductivity (TC) can bear higher laser power density (LPD) and higher reflectivity can enable higher luminous efficacy (LE). As a consequence, the PiGF@sapphire realizes a luminous flux (LF) of 2076 lm@12 W/mm2, which is higher than the PiGF@Al2O3 of 1890 lm@15 W/mm2 and the PiGF@AlN of 1915 lm@24 W/mm2, while the PiGF@BN-AlN enables a maximum LF of 3058 lm@21 W/mm2. Furthermore, the LE of PiGF@BN-AlN reaches up to 194 lm/W, which is 1.6 times that of PiGF@AlN, while that of PiGF@sapphire and PiGF@Al2O3 are 192 lm/W and 150 lm/W, respectively. The working temperature of PiGF@AlN is only 93.3℃ under the LPD of 9 W/mm2, while that of PiGF@sapphire, PiGF@Al2O3, and PiGF@BN-AlN rises to 193.8℃, 133.6℃, and 117℃, respectively. These findings will provide the guiding idea for the commercial applications of PiGF@HCS converters in high-brightness laser lighting and display.
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