Randomly Disassembled Nanostructure for Wide Angle Light Extraction of Top‐Emitting Quantum Dot Light‐Emitting Diodes

Abstract The quantum dot light‐emitting diode (QLED) represents one of the strongest display technologies and has unique advantages like a shallow emission spectrum and superior performance based on the cumulative studies of state‐of‐the‐art quantum dot (QD) synthesis and interfacial engineering. However, research on managing the device's light extraction has been lacking compared to the conventional LED field. Moreover, relevant studies on top‐emitting QLEDs (TE‐QLEDs) have been severely lacking compared to bottom‐emitting QLEDs (BE‐QLEDs). This paper demonstrates a novel light extraction structure called the randomly disassembled nanostructure (RaDiNa). The RaDiNa is formed by detaching polydimethylsiloxane (PDMS) film from a ZnO nanorod (ZnO NR) layer and laying it on top of the TE‐QLED. The RaDiNa‐attached TE‐QLED shows significantly widened angular‐dependent electroluminescence (EL) intensities over the pristine TE‐QLED, confirming the effective light extraction capability of the RaDiNa layer. Consequently, the optimized RaDiNa‐attached TE‐QLED achieves enhanced external quantum efficiency (EQE) over the reference device by 60%. For systematic analyses, current–voltage–luminance ( J–V–L ) characteristics are investigated using scanning electron microscopy (SEM) and optical simulation based on COMSOL Multiphysics. It is believed that this study's results provide essential information for the commercialization of TE‐QLEDs.