Design of an UV–Vis photodetector of ZnO/MAPbI3 composite

The combination of inorganic semiconductor and organic lead halide perovskite to prepare photodetectors can produce wider spectral response and better photoelectric performance to a certain extent, so it has been widely studied. Here, ZnO thin film was prepared by radio frequency magnetron sputtering, MAPbI₃ was prepared by spin coating method, and ZnO/MAPbI₃ composite UV-vis photodetector was prepared. ZnO is n-type semiconductor material, MAPbI₃ is p-type semiconductor material and ZnO/MAPbI₃ heterojunction is formed at the contact interface. Electrons from MAPbI₃ diffuse into ZnO and holes from ZnO diffuse into MAPbI₃, forming a built-in electric field. The surface of ZnO reacted photodesorption, the width of the depletion zone is reduced, leading to an increase in free carriers. With an operating voltage bias of 3 V, the ZnO/MAPbI₃ photodetector represented significantly enhanced spectral reactivity (0.02 A/W). Therefore, our study will provide a reference for combining inorganic substances and perovskite to be used in high-performance photodetectors.