Review of β-Ga2O3 solar-blind ultraviolet photodetector: growth, device, and application

Abstract Due to the excellent responsivity and high rejection ratio, Ga 2 O 3 -based solar-blind ultraviolet photodetectors (PDs) are attracting more and more attention. The excellent material quality ensures great performance of PDs. In this review, we summarize recent advancements in growth methods of β -Ga 2 O 3 bulk and thin films. Based on high-quality substrates and thin films, numerous state-of-art Ga 2 O 3 -based PDs have been reported in decades. Therefore, we collect some representative achievements in Ga 2 O 3 -based PDs, summarizing the development process of each type of structure. Furthermore, the advantages and disadvantages of different structures are also discussed to provide practical reference for researchers in this field. Additionally, inspired by the excellent performance of Ga 2 O 3 -based PDs, many research teams have also explored the applications based on solar-blind detection. We summarize three application fields, including imaging, light communication, and optical tracing, introducing some excellent works from different teams. Finally, we evaluate the outlook and remaining challenges in the future development of Ga 2 O 3 -based PDs.