钙钛矿(结构)
退火(玻璃)
材料科学
异质结
化学工程
开路电压
纳米技术
光电子学
电压
量子力学
物理
工程类
复合材料
作者
Cuiting Kang,Shuaihang Xu,Huashang Rao,Zhenxiao Pan,Xinhua Zhong
出处
期刊:ACS energy letters
[American Chemical Society]
日期:2023-01-09
卷期号:8 (2): 909-916
被引量:17
标识
DOI:10.1021/acsenergylett.2c02060
摘要
The introduction of a two-dimensional (2D) perovskite into a three-dimensional (3D) perovskite has been proven to be effective in minimizing defect state density and improving the performance and stability of the corresponding perovskite solar cells (PSCs). However, it is a challenge to construct a 2D perovskite in 3D inorganic perovskites (CsPbX3, X = halogen) due to the limitation of the annealing temperature or the resistance of Cs+ toward the commonly used organic cation spacer. Here, we propose a strategy for the construction of an all-inorganic 2D/3D CsPb2I4Br/CsPbI2Br bulk heterojunction (BHJ) by the in situ reaction of excess PbI2 in a precursor solution with CsPbI2Br during the annealing process. The formed 2D/3D BHJ effectively passivates the defects at the surface and grain boundaries of 3D CsPbI2Br and reduces the nonradiative recombination loss in the resulting carbon-electrode-based perovskite solar cells (C-PSCs). The open-circuit voltage and efficiency of the champion C-PSCs are boosted to 1.32 V and 15.25%, respectively, which are the best results for CsPbI2Br-based C-PSCs.
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