High-Performance and Robust Spintronic/CNTFET-Based Binarized Neural Network Hardware Accelerator

计算机科学 XNOR门 稳健性(进化) 晶体管 碳纳米管场效应晶体管 人工神经网络 计算机硬件 逻辑门 卷积神经网络 嵌入式系统 人工智能 电气工程 场效应晶体管 与非门 算法 工程类 电压 基因 生物化学 化学
作者
Milad Tanavardi Nasab,Abdolah Amirany,Mohammad Hossein Moaiyeri,Kian Jafari
出处
期刊:IEEE Transactions on Emerging Topics in Computing [Institute of Electrical and Electronics Engineers]
卷期号:11 (2): 527-533 被引量:29
标识
DOI:10.1109/tetc.2022.3202113
摘要

The convolutional neural network (CNN) is a significant part of the artificial intelligence (AI) systems widely used in different tasks. The binarized neural networks (BNNs) reduce power consumption and hardware overhead to answer the demands for using AI in power-limited applications. In this paper, a BNN hardware accelerator is proposed. The proposed approach is based on a novel nonvolatile XNOR/XOR circuit designed using the magnetic tunnel junction (MTJ) and gate-all-around carbon nanotube field-effect transistor (GAA-CNTFET) devices. The nonvolatility of the proposed design leads to the elimination of external memory access that significantly decreases the data transmission delay and power dissipation. Moreover, it consumes low energy, which is very critical in battery-operated devices. Furthermore, the combinational read circuitry of the proposed design leads to high robustness to process variations. According to the simulation results, our proposed design has a logical error rate of 0.0164%, which is negligible and offers a significantly high network accuracy even in the presence of significant process variations. Our proposed hardware accelerator provides at least 13%, 29%, and 41% improvements regarding power, power delay product (PDP), and area compared to its state-of-the-art counterparts.
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