热氧化
材料科学
热的
化学工程
光电子学
热力学
硅
工程类
物理
作者
O. Blum,M. J. Hafich,J. F. Klem,K. C. Baucom,Andrew A. Allerman
出处
期刊:Electronics Letters
[Institution of Engineering and Technology]
日期:1997-06-05
卷期号:33 (12): 1097-1099
被引量:14
摘要
The authors describe lateral steam oxidation of the AlAsSb material system, varying the As/Sb ratio. Large oxidation depths are obtained for a variety of As/Sb ratios, as long as both As and Sb are present. In comparison, oxidation of AlAs is much slower, whereas AlSb does not appear to oxidise at all. Qualitatively different oxides are obtained from AlAs0.56Sb0.44 and AlAs0.16Sb0.84.
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