材料科学
薄膜
带隙
超晶格
氮化物
基质(水族馆)
宽禁带半导体
溅射沉积
拉曼光谱
光电子学
衍射
合金
拉曼散射
溅射
吸收边
半导体
光学
纳米技术
复合材料
图层(电子)
海洋学
物理
地质学
作者
K. Kubota,Yusuke Kobayashi,Kazumi Fujimoto
摘要
Thin films of III-V nitride semiconductors (AlN, GaN, InN), mixed-crystalline films (AlxIn1−xN), and multilayered films (GaN/InN)n were grown by rf magnetron sputtering at low substrate temperatures below 500 °C. These films were characterized by x-ray diffraction, Raman scattering, optical absorption, and electrical measurements; it was proved that they have high crystal quality comparable to the previously reported data obtained by other growth methods. Dependence of the band-gap energy of AlxIn1−xN on composition x was determined. Multilayered films of (GaN/InN) were prepared for the first time; these films showed the characteristic diffusion property to make an ordered-alloy superlattice.
科研通智能强力驱动
Strongly Powered by AbleSci AI