(Plenary) Beyond-Si CMOS Technologies Based on High-Mobility Channels

This paper introduces a novel “Unipolar CMOS” logic technology that only requires either an N-channel or a P-channel MOSFET to form an inverter and other logic gates that are building blocks of all logic circuits. In contrast to the outdated NMOS or PMOS technology, which also requires only N-MOSFETs or P-MOSFETs, the “Unipolar CMOS” logic consumes very little standby power, just like the conventional CMOS logic. The principle of operation of the Unipolar CMOS will be described, so will be examples of device structures that are suitable for implementing the Unipolar CMOS logic. It will be shown that many III-V semiconductors and many thin-film transistors that are difficult to realize both P- and N- channels on the same semiconductor substrate are ideal targets for the Unipolar CMOS.