Patterning of quantum dot light‐emitting diodes based on IGZO films

Abstract The patterning of quantum dot light‐emitting diodes (QLED) is essential for QLED in the display application. In the work, we studied patterning thin film to form IGZO electron transport layers for QLED. Making use of a staggered IGZO film as the electron transport layer, we studied QLED degradation and observed luminance inversion, which is due to the non‐uniform current spreading effect caused by the staggered IGZO film. The current crowding at the thinner film area (with lower electric resistance) leads to a patterned emission of the device but also a faster device degradation at the same time.