量子点
绝缘体上的硅
量子计算机
光电子学
MOSFET
晶体管
泊松方程
解算器
材料科学
物理
计算机科学
量子
电子工程
硅
量子力学
工程类
电压
程序设计语言
作者
F. Beaudoin,Pericles Philippopoulos,Chenyi Zhou,Ioanna Kriekouki,Michel Pioro-Ladrière,Hong Guo,Philippe Galy
摘要
We present non-linear Poisson and Schrödinger simulations of an industrially fabricated gated quantum dot device at 100 mK using the Quantum-Technology Computer-Aided Design (QTCAD) software [see https://nanoacademic.com/solutions/qtcad/ “QTCAD: A Computer-Aided Design Tool for Quantum-Technology Hardware, Nanoacademic Technologies Inc.” (2022)]. Using automatic adaptive meshing, the 3D conduction band edge profile of an ultra-thin body and buried oxide fully-depleted silicon-on-insulator field-effect transistor is calculated under steady-state and isothermal conditions. This profile is shown to display potential wells consistent with the experimental observation of side-gate-activated corner quantum dots. The electronic structure of these dots is investigated as a function of applied gate bias within the effective mass theory. Crucially, convergence at 100 mK is shown to be a robust feature of QTCAD's non-linear Poisson solver; convergence is consistently achieved without user intervention for 10 out of 10 random gate bias configurations.
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