In–Ga–Zn–O memristor with double layers of different oxygen vacancy densities and long-term memory towards neuromorphic applications

Abstract An In–Ga–Zn–O (IGZO) memristor with double layers of different oxygen vacancy (V O ) densities has been developed, and long-term memory towards neuromorphic applications has been confirmed. The IGZO layer of the higher V O density functions as a pseudo electrode to avoid the Schottky behavior, whereas that of the lower V O density functions as a conductance change layer. The long-term potentiation and long-term depression are observed based on the memristor characteristic by applying pulse voltages, which demonstrates the future possibility towards neuromorphic applications.