Novel strategies for low-voltage NAND flash memory with negative capacitance effect

Abstract Here, we present a novel approach to employing a negative capacitance (NC) phenomenon in the blocking oxide of charge trap flash (CTF) memory. To achieve this, we developed an inversible mono-domain like ferroelectric (IMFE) film through high-pressure post-deposition annealing in a forming gas at 200 atm (FG-HPPDA). The FG-HPPDA process enables to form a uniform alignment of domains and facilitates invertible domain switching behavior in ferroelectrics, generating an internal field by the flexo-electric effect as well as interface-pinned polarization by chemical reaction. Subsequently, to stabilize the NC effect, we fabricated the IMFE/Al 2 O 3 heterostructure, which exhibits an outstanding capacitance-boosting feature. Finally, we successfully demonstrate unprecedented CTF memory with the NC effect in a blocking oxide. Our unique CTF device shows the improved performance (maximum incremental-step-pulse-programming (ISPP) slope ∼1.05) and a large MW (>8 V), attributed to the capacitance boosting by NC phenomenon.