Low dark current with high-speed detection in a scalable perovskite photodetector

The figures of merit (FOMs) of the perovskite photodetector (PD) strongly depend on the active area of the device. With an increase in PD area, sensitivity increases, and so does the dark current, which compromises the overall performance of the device. In this work, we controlled the excessive increase in dark/noise current while scaling up the PD area from 10 mm 2 to 100 mm 2 . We present p-i-n perovskite PDs (PPDs) with polymeric and self-assembled monolayer (SAM)-based hole transport layers (HTLs). The SAM-based PPDs show a lowest dark current of 1.48 × 10 − 10 A/cm 2 and fast response down to 580 ns for an active area of 10 mm 2 . The reverse saturation current density ( J 0 ) increases with active area mostly due to shunt paths, which correlates with a decrease in specific detectivity (D∗). Beyond the scaled-up PPDs of this study, this contact engineering holds the promise to provide other high-performance large-area optoelectronic devices.