On the dielectric and magnetic properties of Al doped Pr:123 for advanced devices: A comparison with ZnO

For ZnO comparison, we report here the dielectric and magnetic properties of PrBa2Cu3-3xAl3xOy (Al:Pr123) samples with (0.00 ≤ x ≤ 1.00). The dielectric constant (ε′), ac electrical conductivity (σac) and F-factor were decreased as x increased to 1.00, but the q-factor was increased. As compared to ZnO, the x ≤ 0.05 samples show higher values of ε′, σac and F-factor, as well as q-factor, but at x ≥ 0.10. In addition, the binding energy was increased from 0.423 to 0.672 eV as x increased to 0.30, but above that it significantly enhanced until reach to 38.825 eV. The Cole-Cole plot shows a complete circle for the samples of x ≤ 0.05, and semicircular arcs for the x ≥ 0.10 and ZnO. Moreover, the impedance of grain and grain boundaries is significantly increased as x increases to 1.00, but they are lower than of ZnO. Although ZnO exhibits poor ferromagnetic behavior, the Al: Pr123 samples show strong ferromagnetic behavior with evaluated magnetization parameters. Moreover, these outcomes strongly recommend the Al: Pr123 samples, better than ZnO, for the devices of integrated circuits, solar cells, super-capacitors and spintronics.