Research on Failure Mechanism and Health Evaluation Index System of Welding IGBT Module

With the wide application of insulated gate bipolar transistor (IGBT) in power electronic devices, high power IGBT module inside power electronic devices has become a bottleneck that restricts the overall reliability improvement of the system, and the reliability evaluation of IGBT has become an important subject of current research. Based on the analysis of IGBT failure mechanism, this paper analyzes the research status of IGBT health monitoring from the perspective of electrical, thermal and insulation parameters. Finally, a more complete set of health status evaluation index system of welded IGBT is proposed, which is of great significance to the health status evaluation of IGBT in power electronic devices.