The Effect of Substrate Doping types on the Switching Behaviors of Ultrathin SiO x Memristors

Memristors using 2D materials hold great promise for neuromorphic computing due to their low power consumption and high durability. However, cycling reliability remains a challenge. This study investigates the impact of substrate doping on the yield and cycling life of ultrathin Ag/SiO x /Si memristors formed by native oxidation. The results show that p‐type devices exhibit reversible switching behavior with a 100% yield under various compliance current conditions, while n‐type devices display irreversible switching behavior with a maximum yield of 65%. More specifically, Ag/SiO x /p‐Si devices achieve more than 10 3 switching cycles under a 10 −4 A compliance current, whereas Ag/SiO x /n‐Si devices exhibit fewer than 80 cycles. The superior performance of p‐type devices is attributed to the formation of a Schottky barrier at the Ag/SiO x /p‐Si interface, which effectively facilitates reversible filament formation, whereas n‐type devices lack this barrier, leading to the formation of ohmic contacts and premature failure. These findings emphasize the critical role of interface engineering, particularly Schottky junction formation, in enhancing the reliability, controllability, and yield of ultrathin oxide‐based memristors, thus laying the foundation for their application in neuromorphic computing and memory technologies.