电源抑制比
带隙基准
光电子学
材料科学
物理
电气工程
工程类
CMOS芯片
电压基准
电压
跌落电压
放大器
作者
Zonghui Li,Yani Li,Libo Qian,Zhangming Zhu
标识
DOI:10.1109/tvlsi.2025.3596098
摘要
This article presents a low-power bandgap reference (BGR) featuring high power supply rejection ratio (PSRR) and fast start-up capability, operating across a wide supply voltage range of 1.3–5 V. A novel prebiased pulse current injection technique is proposed in the start-up circuit, achieving a 1% settling time of $50~\mu $ s and a $25\times $ speed gain during start-up. To enhance supply noise immunity, the proposed BGR employs a preregulated (PR)-based amplifier that effectively decouples the reference voltage from supply voltage fluctuations. Fabricated in a 0.18- $\mu $ m BCD process, the proposed reference occupies an active area of 0.0394 mm2. Under a 5 V supply, the circuit generates a 1.2 V reference voltage while consuming only 48 nA quiescent current. Operating down to a minimum supply voltage of 1.3 V, it maintains a low power consumption of 57.2 nW at room temperature. The reference exhibits an average temperature coefficient (TC) of 5.95 ppm/°C across a wide temperature range ( $- 40~^{\circ }$ C to $125~^{\circ }$ C) and achieves an outstanding line sensitivity (LS) of 0.00308%/V over the 1.3–5 V supply range. Furthermore, the measured PSRR reaches −85 dB at 100 Hz.
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