Optical Second Harmonic Generation on Ferroelectric Polarization Reversal for Ferroelectric Hf0.5Zr0.5O2 Capacitors

铁电性 二次谐波产生 电容器 极化(电化学) 材料科学 点反射 光电子学 二次谐波成像显微术 电介质 电压 光学 化学 凝聚态物理 物理 激光器 物理化学 量子力学
作者
Siddhant Dhongade,Hiroyuki Yamada,Akihito Sawa,Hiroyuki Matsuzaki
出处
期刊:ACS applied electronic materials [American Chemical Society]
卷期号:6 (2): 1292-1298 被引量:1
标识
DOI:10.1021/acsaelm.3c01613
摘要

Optical second harmonic generation (SHG) is observed in materials with broken spatial inversion symmetry; thus, it can be used for the characterization of ferroelectrics with broken spatial inversion symmetry. In this study, we performed SHG measurements on the polarization reversal of ferroelectric capacitors consisting of a Hf0.5Zr0.5O2 (HZO) layer and indium tin oxide (ITO) electrodes. The SHG signals for the ITO/HZO/ITO capacitors were measured by applying a sequence of unipolar triangular voltage pulses, and SHG signal–voltage hysteresis loops were obtained. We qualitatively analyzed the results using models assuming the coexistence of switchable ferroelectric polarization in the HZO layer and nonswitchable apparent polarizations (fixed polarizations) at the surface, interfaces, and in the HZO layer of the capacitors. The analyses revealed that the SHG signals from the apparent polarizations of the capacitors were larger than those from ferroelectric polarization in the HZO layer, and the observed hysteretic SHG signal–voltage loops were attributable to polarization reversal (switching) in the HZO layer. These findings demonstrate that SHG measurements can reveal the existence of apparent polarizations in ferroelectric capacitors, as well as evaluate the impact of apparent polarizations on SHG signals compared to that of ferroelectric polarizations. This is an advantage of the SHG measurement over other electrical methods, which only address switchable ferroelectric polarization. Thus, SHG measurements can be used to detect polarizations at the surface and interfaces; the results of the study provide useful insights for improving the device performance of HfO2-based ferroelectrics.

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