High-performance nano-scale InSnO transistors

Abstract Nanoscale short-channel oxide thin film transistors (TFTs) have attracted widespread research interest due to their potential applications in advanced display and memory devices. In this work, we fabricate indium-tin-oxide (ITO) TFTs with a series of channel lengths ranging from 10μm to 150nm. And through optimized process we successfully fabricate 130-nm channel length high performance ITO TFTs with an on-state current of 93 (μA/μm), a subthreshold swing (SS) of 102 (mV/decade) and on/off ratio over 107 at drain voltage of 3 V.