Mn–Si synergistically co-doping adjusting microstructures and microwave-millimeter-wave dielectric properties of Y3Al5O12 garnet ceramics: Lattice occupancy and ligand distortion perspective

Y3-xMnxAl5-xSixO12 (x = 0.1–0.5) ceramics were fabricated through the high-temperature reaction method. The effects of Mn2+-Si4+ co-doping on lattice occupancy, ligand distortion and microwave dielectric properties of Y3Al5O12 garnet were inquired. Mn2+ ions successively occupy the lattice sites of Y3+ dodecahedron and Al3+ octahedron along with the increase of distortion degree of [AlO6] octahedron. In Y3-xMnxAl5-xSixO12, εr predominantly correlates with ionic polarizability, average bond ionicity (△fi) and Mn2+ ionic lattice occupation. The Q × f is primarily influenced by factors like relative density, lattice energy (U) and atomic packing fraction. Meanwhile, τf is associated with the distortion of octahedra, bond energy (E), and the bond valence between Y/Mn and O. Ultimately, the microwave and millimeter-wave dielectric properties of the Y2.8Mn0.2Al4.8Si0.2O12 ceramics excel with values of εr = 10.89, Q × f = 56,135 GHz@11 GHz (Q × f = 88200 GHz@25 GHz), and τf = -39.35 ppm/°C.