光电探测器
光电子学
材料科学
频道(广播)
计算机科学
电信
作者
YUNJIE YAN,Mingxiang Yang,Shaoshuai Han,Chang‐Heon Kang,Hasan Salmanian,Zhenlin Wu,Yiying Gu,Mingshan Zhao,Geert Morthier
标识
DOI:10.1364/opticaopen.28113614
摘要
We propose an integrated back-illuminated InP/InGaAs p-i-n photodetector array (PDA) with high responsivity and external quantum efficiency. The photodetector array was characterized and packaged for small-signal response and transmission experiments. At the bias voltage of -5V, the dark current is below 0.35nA and the average optical responsivity reaches up to 1 A/W for each ∅ = 50μm element at 1550nm. The external quantum efficiency is as high as 81% at -5V at 1550nm. Under the photocurrent of 63μA at -5V bias, the proposed InP/InGaAs PDA exhibits an average 3dB bandwidth of 3.6GHz. We finally demonstrate a BER below 10−12 at a 2.25Gbit/s data rate. The compact size and large photosensitive area of the PDA will enable new applications for Radio on Free Space Optical communications(RoFSO).
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