Influence of indium and selenium co-doping on structural and thermoelectric properties of Bi2Te3 alloys

Abstract The melt-grown, indium and selenium co-doped Bi 2 Te 3 single-crystal system is studied with a purpose to improve and analyze the thermoelectric performance in the low and near room-temperature range (10–400 K). The influence of co-dopants on the crystalline perfection, symmetry, dislocation, and single-crystal quality is investigated using high-resolution X-ray diffraction. The surface morphological features show the existence of small-angle grain boundaries, white patches, and tilt boundaries. Degenerate type of semiconducting behavior is seen in all the samples over the entire temperature range. The existence of small polarons is experimentally inferred from temperature-dependent electrical resistivity. Measurement of Seebeck coefficient confirms p - to n -type transition in the crystals doped with indium and selenium. The total thermal conductivity at 11 K was decreased by 3.4 times in (Bi 0.98 In 0. 02 ) 2 Te 2.7 Se 0.3 as compared to pristine sample. Therefore, this novel co-doped indium and selenium Bi 2 Te 3 single-crystal combination is viable to use as a competitor for low and near-room-temperature thermoelectric applications.