串联
钙钛矿(结构)
终端(电信)
材料科学
能量转换效率
功率(物理)
工程物理
光电子学
化学工程
计算机科学
电信
工程类
物理
复合材料
热力学
作者
Kshitiz Dolia,Sabin Neupane,Sheng Fu,Yifan Yin,Abasi Abudulimu,Amirhossein Rahimi,Mark Hattarki,Briana Dokken,Tingting Zhu,Alisha Adhikari,Manoj K. Jamarkattel,R. E. Irving,Adam B. Phillips,Michael J. Heben,Randy J. Ellingson,Yanfa Yan,Zhaoning Song
出处
期刊:Solar RRL
[Wiley]
日期:2024-05-07
卷期号:8 (21)
被引量:18
标识
DOI:10.1002/solr.202400148
摘要
Thin‐film tandem photovoltaic (PV) technology has emerged as a promising avenue to enhance power conversion efficiency beyond the radiative efficiency limit of single‐junction devices. Combining a tunable wide‐bandgap perovskite cell with a commercially established narrow‐bandgap cadmium selenium telluride (CdSeTe) cell in a comparatively easy‐to‐fabricate four‐terminal (4‐T) arrangement is a great step in that direction. Herein, the impact of the transparent back contact and the perovskite absorber bandgap on the performance of 4‐T perovskite–CdSeTe tandem solar cells is investigated. 4‐T perovskite–CdSeTe tandem device architecture with ≈25% efficiency is demonstrated and a feasible pathway is shown to improve the tandem efficiency to more than 30%. The results show that the integration of CdSeTe with perovskite in 4‐T tandem PV configurations represents a significant advancement toward achieving higher efficiency and low‐cost tandem PVs.
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