Epitaxial analysis of GaInP/AlGaInP red light-emitting diodes with ternary AlGaP quantum barriers for quantum efficiency enhancement

Abstract We have numerically analyzed Gallium Indium Phosphide (GaInP)/Aluminum Gallium Indium Phosphide (AlGaInP) red light-emitting diodes (LEDs) by utilizing ternary Aluminum Gallium Phosphide (AlGaP) quantum barriers instead of the conventional quaternary AlGaInP quantum barriers. The simulation findings show that the use of AlGaP quantum barriers in AlGaInP red light-emitting diodes leads to a significant increase in both electron and hole concentration in the quantum wells which in turn enhances the rate of radiative recombination compared to conventional (reference) red light-emitting diodes. Furthermore, the proposed LEDs have a substantial decline in efficiency droop from 38% to 32%.