钝化
异质结
光电子学
材料科学
硅
基质(水族馆)
量子效率
非晶硅
太阳能电池
聚合物太阳能电池
载流子寿命
晶体硅
纳米技术
图层(电子)
海洋学
地质学
作者
Meijun Lu,Stuart Bowden,Ujjwal Das,Robert W. Birkmire
摘要
This letter reports interdigitated back contact silicon heterojunction (IBC-SHJ) solar cells which combine the performance benefits of both back contact and heterojunction technologies while reducing their limitations. Low temperature (<200°C) deposited p- and n-type amorphous silicon used to form interdigitated heteroemitter and contacts in the rear preserves substrate lifetime while minimizes optical losses in the front. The IBC-SHJ structure is ideal for diagnosing surface passivation quality, which is analyzed and measured by internal quantum efficiency and minority carrier lifetime measurements. Initial cells have independently confirmed efficiency of 11.8% under AM1.5 illumination. Simulations indicate efficiencies greater than 20% after optimization.
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