退火(玻璃)
活化能
热力学
无定形固体
扩散
有效扩散系数
分布函数
重组
高斯分布
反常扩散
统计物理学
化学
材料科学
化学物理
物理化学
物理
结晶学
计算化学
放射科
创新扩散
磁共振成像
基因
医学
知识管理
生物化学
计算机科学
摘要
Models for annealing processes in damaged, amorphous SiO2 are discussed. Using a series expansion approach, theories developed for diffusion-limited recombination are adapted to allow for a Gaussian distribution of activation energies. It is found that the effect of a distribution having deviation ΔE, and center EA can be accounted for by using an effective diffusion coefficient, D̃, such that in the series expansion any power (n) is defined by (D̃)n=Dn0 exp 1/2 (nΔE/kT)2 exp(−nEA/kT). This form is more complicated than that found previously for ‘‘pure’’ diffusion studies. The importance of the form of the distribution function for the activation energies is discussed in the context of the full diffusion-limited theory for annealing. It is argued that processes occurring at temperatures in excess of 500 °C are not due to diffusional recombination.
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