Resonant-cavity-enhanced photodetectors for the mid-infrared

High-efficiency resonant-cavity-enhanced photodetectors for the mid-wavelength infrared range have been realized. Spectral linewidths as narrow as 0.07μm at 4.13μm and 0.24μm at 8.41μm center wavelength, respectively, have been achieved. Peak quantum efficiencies are up to above 50%. The photovoltaic devices are based on IV-VI semiconductor layers grown epitaxially on Si substrates and employing a distributed Bragg mirror to form the cavity.