High-performance thin H:SiON OLED encapsulation layer deposited by PECVD at low temperature

. The mild H:SiON film process improved the electrical properties of top-emission OLEDs without generating any dark spots. Furthermore, single H:SiON films having high water vapor barrier could maintain the original illumination features of TEOLED longer than 720 hours. These excellent properties of the H:SiON thin films originated from the structural changes of the SiON material by the introduction of hydrogen.