光电子学
材料科学
量子点激光器
量子点
兴奋剂
活动层
相对强度噪声
硅
光学
激光器
量子阱
半导体激光器理论
光子学
外延
调制(音乐)
半导体
物理
图层(电子)
纳米技术
声学
薄膜晶体管
作者
Jianan Duan,Yueguang Zhou,Bozhang Dong,Heming Huang,Justin Norman,Daehwan Jung,Zeyu Zhang,Cheng Wang,John E. Bowers,Frédéric Grillot
出处
期刊:Optics Letters
[Optica Publishing Group]
日期:2020-08-04
卷期号:45 (17): 4887-4887
被引量:32
摘要
This work experimentally investigates the impact of p-doping on the relative intensity noise (RIN) properties and subsequently on the modulation properties of semiconductor quantum dot (QD) lasers epitaxially grown on silicon. Owing to the low threading dislocation density and the p-modulation doped GaAs barrier layer in the active region, the RIN level is found very stable with temperature with a minimum value of -150dB/Hz. The dynamical features extracted from the RIN spectra show that p-doping between zero and 20 holes/dot strongly modifies the modulation properties and gain nonlinearities through increased internal losses in the active region and thereby hinders the maximum achievable bandwidth. Overall, this Letter is important for designing future high-speed and low-noise QD devices integrated in future photonic integrated circuits.
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